Abstract
The metal-oxide-semiconductor (MOS) system is by far the most important device structure used in both large scale integration (LSI) and very large scale integration (VLSI) technologies. The present LSI and VLSI digital circuits are based almost entirely on n-channel MOSFETs and complementary MOSFETs (CMOSFETs). The MOS structure is a basic building block for several key integrated-circuit active components, namely, MOS field-effect transistors (MOSFETs), insulated-gate field-effect transistors (IGFETs), and charge-coupled devices (CCDs). Most commerically available MOSFETs and CCDs are fabricated from the Si-SiO2 system. Therefore, it is pertinent to devote this chapter to discussing silicon-based MOS capacitors, MOSFETs and CCDs. The FETs fabricated from III–V compound semiconductors will be depicted in Chapter 15.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
