A proper deep submicron MOSFET model (PDSMM) and its applications for delay modeling of CMOS inverters

Abstract

A new and simple proper deep submicron MOSFET model (PDSMM) is proposed to accurately describe deep submicron MOSFET I-V characteristics. The second-order effects of deep submicron metal-oxide semiconductor field effect transistors (MOSFETs) such as charge carrier velocity saturation and channel length modulation are included in the PDSMM. The PDSMM is the extension of Shockley-Sah MOSFET model and Shichman-Hodges MOSFET model taking the second-order effects into account. Propagation delays of a complementary metal-oxide semiconductor (CMOS) inverter are obtained by using the PDSMM and by considering input transition time, drain diffusion capacitance, output load capacitance and gate-drain coupling capacitance. Even in the extreme conditions, the calculated results of propagation delays of deep submicron CMOS inverters are accurate compared with SPICE results of BSIM3 model. This shows that the proposed PDSMM is suitable to accurately simulate deep submicron MOSFET I-V behaviors.