Metalorganic molecular beam epitaxy of GaAs using hydrogen radical beam

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The effects of a hydrogen radical beam on metalorganic molecular beam epitaxy are examined. An oxide layer of GaAs is removed by hydrogen radical irradiation. Self-limiting growth is suppressed when trimethylgallium (TMGa) and arsine (AsH 3) are supplied alternately under hydrogen radical pressure. When triethylgallium (TEGa), TMGa and AsH 3 are supplied sequentially, the growth rate of GaAs increases with total amount of TEGa supply plus TMGa supply, while the growth rate increases with only amount of TEGa without hydrogen radicals. It is considered that hydrogen radicals cut the bonds of both a methyl radical and an ethyl radical with Ga atom in TMGa and TEGa molecules.