Abstract
The effects of a hydrogen radical beam on metalorganic molecular beam epitaxy are examined. An oxide layer of GaAs is removed by hydrogen radical irradiation. Self-limiting growth is suppressed when trimethylgallium (TMGa) and arsine (AsH 3) are supplied alternately under hydrogen radical pressure. When triethylgallium (TEGa), TMGa and AsH 3 are supplied sequentially, the growth rate of GaAs increases with total amount of TEGa supply plus TMGa supply, while the growth rate increases with only amount of TEGa without hydrogen radicals. It is considered that hydrogen radicals cut the bonds of both a methyl radical and an ethyl radical with Ga atom in TMGa and TEGa molecules.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
