Abstract
The self-limiting growth of atomic layer epitaxy by metalorganic molecular beam epitaxy using trimethylgallium (TMGa) and arsine (AsH3) was studied as a function of substrate surface condition. It was observed that GaAs growth from TMGa and AsH3 is limited to 1 monolayer (ML) on an As-stabilized surface and that TMGa can adsorb on a Gacovered surface. In-situ observation of RHEED intensity showed that the TMGa in excess of 1 ML on the GaAs substrate desorbed after TMGa supply was stopped. It was found that self-limiting monolayer growth resulted from desorption of the excess TMGa.
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