Abstract
This paper describes the process we used in selecting GaAs and InP as the best foreign (non-CdTe) substrates for metal–organic chemical vapor deposition (MOCVD) growth of CdTe to form hybrid substrates suitable for use as substrates for epitaxial growth of HgCdTe. We describe the MOCVD growth process and give typical characterization results. We carried out a 12 run statistical design experiment to identify the most important parameters which turned out to be the metal–organic pressures and the growth temperature. These hybrid substrates have been used for the growth of HgCdTe by liquid-phase epitaxy (LPE). Responsivity of 104 V/W is reported for Hg0.7Cd0.3Te with 3.5×1015 donors/cm3 grown on a long wavelength infrared (LWIR) transparent hybrid substrate.
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