Abstract
GaSb-based compound semiconductors are suitable materials for low-noise avalanche photo-diodes(APD's) and long wavelength laser diodes and photodetectors. In this paper, we review the metal organic chemical vapor deposition (MOCVD) growth conditions and the properties of GaSb, GaInSb and AlGaSb epitaxial layers, including the effects of III/V ratio, growth temperature, pressure and growth rate on electrical quality, optical properties, surface morphology and solid distribution coefficients.
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