Metal–insulator–metal capacitors using Ba 2Ti 9O 20 dielectric thin film

Abstract

The dielectric properties of Ba 2Ti 9O 20 film were investigated to evaluate its potential use in metal–insulator–metal (MIM) capacitors. A homogeneous crystalline Ba 2Ti 9O 20 phase without any second phase developed for the film grown at 700 °C and rapid thermal annealed at 900 °C for 3 min. The 200 nm-thick Ba 2Ti 9O 20 film showed a capacitance density of 2.0 fF/μm 2 with a low dissipation factor of 0.016 at 100 kHz. The capacitance density of the film was low, but it could be increased by decreasing the thickness of the film. The leakage current density was approximately 0.094 nA/cm 2 at 1 V. A small linear voltage coefficient of capacitance of −690 ppm/V was obtained, together with a quadratic one of −67.41 ppm/V 2 and a small temperature coefficient of capacitance of −168.87 ppm/°C at 100 kHz. All these results show that the Ba 2Ti 9O 20 film is a good candidate material for MIM capacitors.