Abstract
The dielectric properties of (BST) and (ST) films were investigated in order to evaluate their potential for use in metal–insulator–metal (MIM) capacitors. The crystalline BST phase was formed when the film was grown at and subjected to rapid thermal annealing (RTA) at . The ST phase was formed in the film grown at and subjected to RTA at . A high capacitance density of and a low leakage current density of were obtained from the BST film with a thickness of . The BST film has the linear and quadratic coefficients of capacitance of and , respectively, and a temperature coefficient of capacitance of at . The ST film has a high capacitance density and a very low leakage current density . The ST film also showed small voltage and temperature coefficients of capacitance. Therefore, both the BST and ST films are good candidate materials for MIM capacitors.
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