Abstract
Solid source molecular beam epitaxial (MBE) growth of AlInAs/(Al)GaInAs heterostructures for applications in metal-semiconductor-metal (MSM) photodetectors and electrooptic MSM modulators has been optimized with regard to high frequency performance. The influence of the thickness of an AlInAs barrier enhancement layer on the dynamical characteristics is also investigated. In contrast to the commonly chosen thickness of about 10 nm we show that an increase to 100 nm AlInAs results in bandwidth enhancement and noise reduction. Using these improved structures with breakdown voltages exceeding V B=100 V for electrooptic switching we attain an on-off-ratio of 19:1.
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