Gas source molecular beam epitaxial growth model for Ga x In1?x As y P1?y on GaAs

Abstract

A gas source molecular beam epitaxial (GSMBE) growth model considering an intermediate InGaAsP state is presented. This model is very simple and needs only two fitting parameters, kIn and kGa, which are determined experimentally from In1-xGaxAsyP1-y on InP (0<x<0.47 and 0<y<1). At a growth temperature of 480°C, kIn and kGa are 28 and 3 respectively. The temperature dependencies of kIn and kGa are also studied: the fitted activation energies are-30 and 330 meV, respectively. Using these parameters, the model is used to predict the AsH3 and PH3 flow rates for growing In1-xGaxAsyP1-y on GaAs (0.51<x<1 and 0<y<1). The lattice mismatch of all the epilayers grown is within 6×10-4. This indicates that this simple GSMBE model covers the whole compositional range of lattice-matched and coherently strained InGaAsP.