Abstract

In/sub 1-x/Ga/sub x/P is a promising material for optoelectronic devices in the visible wavelength and long wavelength ranges as well as for use in high-speed electronic devices such as hetero-bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). However its controlled epitaxial growth is known to be difficult because the alloy composition x of In/sub 1-x/Ga/sub x/P strongly depends on the growth temperature Tg. In the case of gas source molecular beam epitaxy (GSMBE) growth of In/sub 1-x/Ga/sub x/P, there has been no report on the relationship between x and Tg. The purpose of the present paper is to investigate growth-temperature dependence of growth rate and composition for GSMBE growth of In/sub 1-x/Ga/sub x/P using tertiarybutylphosphine (TBP) and to clarify the underlying mechanism. TBP is a promising substitute for PH/sub 3/ due to its relatively low toxicity.

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