Abstract
We report on results that compare the planar confinement, diffusion and surface segregation of Si and Be δ-doped GaAs grown by gas source molecular beam epitaxy and conventional molecular beam epitaxy. For gas source molecular beam epitaxy growth of †-doped Si and Be we observed diffusion limited doping profile distributions. In molecular beam epitaxy growth the doping profiles further broaden by an impurity surface segregation process.
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