Abstract
The characteristics of oxidation using an electron-cyclotron-resonance (ECR)-plasma stream and metal–oxide–semiconductor (MOS) diodes were studied. Single-layer SiO2 films and stacked SiO2/SiO2 films were formed by oxidation and sputtering. The ECR-plasma stream was extracted using a divergent magnetic field and had ion energies of 10–30 eV. The oxidation of single-crystal Si substrates by the ECR-plasma stream provided a large SiO2 growth rate at the initial growth stage (>6 nm/min) with a very small activation energy of 0.02 eV. SiO2 film was sputter-deposited in the metal mode of reactive ECR sputtering on the SiO2 film previously formed by oxidation. The MOS diodes with the single-layer and stacked SiO2 films had high-quality SiO2/Si interfaces with interface-trap densities of 2×1010–3×1010 cm-2 eV-1, which were obtained by postdeposition annealing at 400°C in hydrogen-gas atmosphere. The SiO2 films formed by oxidation and the stacked SiO2 films provided breakdown fields greater than 11 MV/cm. The dependence of leakage current on measuring temperature was not observed for the stacked SiO2 films, indicating that the dominant conduction was Fowler–Nordheim tunneling.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
