Abstract
A new electron cyclotron resonance (ECR) plasma CVD system is proposed to form high-quality SiO2 and SiN films at high rates. The system applies 400 kHz voltages which ions can follow to the substrate. The system efficiently produces, without heating: 1) SiO2 films in which density and Si-O bond strength are equivalent to those of a thermally oxidized (about 1000° C) film for which deposition rate is higher than 1.2 µ m/min and 2) Si-H bond-free SiN films in which density and resistivity are higher than those of films formed by conventional plasma CVD systems and for which deposition rate is higher than 0.8 µ m/min.
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