Abstract
Oxidation using electron cyclotron resonance (ECR) plasma stream provides a large silicon dioxide growth rate at the initial growth stage (>6 nm/min), a very small activation energy of 0.02 eV for oxidation, and a high-quality interface with interface trap density of 3×1010 cm-2·eV-1. The plasma stream was extracted by a divergent magnetic field from the ECR region and irradiated on a single-crystalline silicon substrate with ion energies of 10–30 eV. The high-quality interface was obtained by oxidation without substrate heating and only postoxidation annealing at 400°C in hydrogen ambient.
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