Abstract
A metal-base transistor of the MOMOM type with large current gain is reported. It uses Bi(Ba,Rb)O/sub 3/ and oxide semiconductors. I-V curves for a Bi(Ba,Rb)O/sub 3/ base transistor in the common-base configuration were studied from room temperature to 30 K. Current gain alpha approximately 1 was obtained at 50 K. Transport behavior is determined by analysis of threshold voltages and derivatives dI/sub c//dV/sub cb/.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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