Abstract
AbstractA review of active device models for microwave CAD simulators is presented. Large‐signal, nonlinear models are of particular interest. The basic techniques employed in deriving equivalent circuit and physically based models are reviewed. Various methods for solving the semiconductor device equations to establish physically based models are indicated. Finally, it is proposed that physically based, analytic GaAs MESFET models offer an attractive compromise between simulation efficiency and quantitative accuracy. The use of such a model is demonstrated by several examples, including comparison with experimental data. These models are suitable for use in comprehensive CAD workstation environments and allow process‐type device models to be interfaced directly with RF circuit simulators.
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