Abstract
A simple, analytical model for Dual Gate MESFETs is presented in this paper. The S-parameters of a Dual Gate MESFET are derived and the calculation of the equivalent small signal circuit is discussed. This model can efficiently be applied to the Investigation of the correlation between process tolerances and the design results. A typical application of such an investigation is shown by deviating e.g. the doping density in the channel. Finally, the comparison between calculations and simulations show, that this physically based, analytical model offers a sufficient compromise between accuracy and computational efficiency. The application of this model to microwave CAD workstations will easily allow to interface the process oriented characterization with RF circuit simulators.
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