Abstract
This paper presents a bidimectiomnal DC study of a dual-gate MESFET (DGMESFET) and a single-gate MESFET (SGMESFET) GaAs with 0.5 mum gates length. We describe the physical operating of these devices and especially the physical phenomena (velocity-field) in dual and single-gate GaAs MESFET. This paper describes also the temperature effect on the electrical characteristics of a dual-gate GaAs MESFETs. We consider the deficiencies with the current approach for simulating the effects of temperature on the DC characteristics of the device. This is carried out by considering the DC characteristics over a wide temperature range. For determine the temperature between two gates of DGMESFET planar structure, we imposing the equality between the field-dependent diffusivity-to-mobility ration (non linear and linear relation). Results of simulation, carried out by the finite element method, prove that the control of the out-put characteristics of the dual-gate MESFET is effective compared to the single-gate MESFET. The dual-gate MESFET exhibits excellent saturation behaviour and a high value of transconductance gm compared to the single-gate MESFET
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