Abstract
The memory characteristics of atomic-layer-deposited high-K HfAlO nanocrystals in a p-Si/SiO 2 /CHfO 2 /Al 2 O 3 ]/Al 2 O 3 /platinum structure have been investigated. After the annealing treatment, the high-K HfAlO nanocrystals with a small diameter of 5 X 10 11 cm 2 have been observed by high-resolution transmission electron microscopy. A large hysteresis memory window of ∼ 10.4 V has been obtained. The high-K HfAlO nanocrystal memory capacitor with a small capacitance equivalent thickness of ∼ 8.5 ± 0.5 nm shows a small leakage current density of ∼ 22 μA cm 2 at a gate voltage of -16 V. A large memory window of ∼8 V has also been observed after 10 5 s of retention, due to the charge confinement in the high-K HfAlO multilayer nanocrystals.
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