Highly Thermally Stable and Reproducible of ALD RuO2 Nanocrystal Floating Gate Memory Devices with Large Memory Window and Good Retention

Abstract

Highly thermally stable (~1000degC) and reproducible of ALD RuO2 nanocrystal floating gate memory devices with a large hysteresis memory window of DeltaV ap 14.6 V under a gate voltage of plusmn10 V have been observed. The memory window of DeltaV ap 4.2 V under a small gate voltage of plusmn3 V is also observed. Both program and erase speeds of DeltaVFB>1 V@100 mus are achieved under Fowler-Nordheim injections. Excellent endurance of DeltaV ap 8.5V, before and after 104 cycles and a large memory window of DeltaV ap 4.9 V after 10 years of retention (9% charge loss at 20degC and -20% charge loss at 85degC) are obtained. The high-performance ALD RuO2 nanocrystal flash memory devices can be operated below 5 V.