Abstract
Enhanced non-volatile memory device characteristics of crystallite Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film (¿900°C) with a large hysteresis memory window of ¿V ¿ 9.8 V under a gate voltage of ±15 V have been observed due to crystallization of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film. The hysteresis memory window of ¿V ¿ 3.8 V under a gate voltage of ±10 V is also observed. Both program and erase speeds of ¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ¿V ¿ 4.0 V after ~2×l0 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> flash memory devices can be operated at ¿10V.
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