Abstract
Two-dimensional (2D) and Three-dimensional (3D) simulation solutions of the melt flow and heat transfer in the industrial scale 300 mm diameter single silicon Czochralski (Cz) growth with a transverse magnetic field were presented. The flow structure of the melt is no longer rotationally symmetric when the crystal and crucible rotate. The complex flow pattern is investigated, and simulation results show that the current caused by crystal rotation has a strong impact on melt convection beneath the interface. In addition, the mechanism through which the current influences melt flow is clarified. A special flow near the interface caused by Lorenz force is reported. All these results indicate the crystal conductivity cannot be neglected in simulation.
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