Abstract
We briefly review various models for the diffusion of impurity atoms in silicon and subject some of them to further numerical and analytical investigations. Similar work is done with respect to the thermal oxidation of silicon. We study the interplay between both processes, leading to segregation at a moving interface in a system with volume change. Special attention is paid to the importance of spatial dimension in that context. Concluding remarks sketch problems appearing with the simulation of dopant diffusion in poly crystalline silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
