Abstract
It is found that the thermal stability of CoSi2 films is improved by N2+ implantation (I/I) because the grain size of CoSi2 films with N2+ I/I is much smaller than that without N2+ I/I. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) analyses show that the nucleation of CoSi2 transformation from CoSi is suppressed by N2+ I/I. The nucleation temperature for the sample with 5×1015 cm-2 N2+ I/I is about 25°C higher than that without N2+ I/I. Since the nucleation temperature is increased, CoSi2 films are formed incompletely at the as-formed state; thus, CoSi2 has small grain size. As a result, the thermal stability of CoSi2 films is significantly improved by N2+ I/I due to the small grain size of CoSi2.
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