Abstract
Yttria‐stabilized zirconia (YSZ) films were deposited on (100) silicon wafers by a plasma‐enhanced metallorganic chemical vapor deposition (PEMOCVD) process involving the application of vapor mixtures of bisdipivaloylmethanato yttrium, zirconium tetra‐t‐butoxide, and oxygen. From the x‐ray diffraction (XRD) and transmission electron microscopy (TEM) results, the as‐deposited YSZ films were found to be a single cubic phase and the preferred orientation of (100). Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) analyses were performed to determine the mole percentage in YSZ films and this result was compared with that obtained by Aleksandrov model using the lattice constant by x‐ray diffraction. The mole percentage in YSZ films obtained by AES and RBS showed a great deviation from those predicted by the Aleksandrov model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
