Abstract
Very high frequency (VHF) glow discharges are employed for high rate a-Si:H deposition while maintaining good optoelectronic materials properties. A more efficient radical generation, either due to higher electron densities or an enhanced high energy electron tail is generally assumed as the mechanism. We have investigated a VHF a-Si:H deposition plasma between 40 and 250MHz by optical emission spectroscopy (OES), mass spectroscopy (MS), ion energy measurements and electrical impedance analysis. The present study shows that the increase of the deposition rate with frequency is essentially due to an enhanced ion flux to the growth surface.
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