Abstract
The use of the Very High Frequency (VHF) glow discharge for the rapid deposition of amorphous silicon (a-Si:H), introduced by our group at Neuchâtel in 1987, offers interesting possibilities for future low cost production of a-Si:H solar cells. We report on the optimization of p-i-n solar cells entirely deposited at VHF comprising SiC window p-layer, 22 A/s deposition rate intrinsic layer, and highly conductive microcrystalline n-layer reaching 8% efficiency, as well as on 32 cm2 integrated modules achieving 7.5% active area efficiency. Furthermore, new results on n- and p-doped microcrystalline material deposited at VHF, with conductivities upto 100 (Ωcm)-1, and studies of hydrogen bonding and microstructure of intrinsic VHF material are presented, indicating both profound differences as compared to conventional GD material. These differences are assumed to be due to a change in the detailed growth mechanism caused by the increase of plasma excitation frequency.
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