Abstract
Metastable increase of dark conductivity with light soaking in compensated α-Si: H(B, Li) is reported for the first time. Similarity in the behavior of α-Si: H(B, Li) and α-Si: H(B, P) suggests similar mechanism for light induced Fermi level shift (Δ E F ) in both the cases. The kinetics of defect formation, annealing and stretch exponential decay of Δ E F infer a process involving light induced structural changes. A model has been proposed by which capture of holes at bistable charge trapping sites by deactivation of boron causes metastable increase of conductivity.
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