Abstract
The possible origins of persistent photoconductivity (PPC) in compensated hydrogenated amorphous silicon ( a-Si : H) are reexamined by the numerical calculation. PPC behavior with the variation of defect density and active dopants concentration is compared with the previous experimental data. The results show that PPC cannot be induced by the defect generation only, but the deactivation of active boron should be included. The variation of PPC with light soaking is well explained by the deactivation of a boron acceptor and a defect generation induced by a hole capture. This result supports the thermal equilibrium, or the charge trapping model rather than the model based only on Staebler-Wronski effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
