Abstract
Silicon-doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019 cm−3 show only a low carrier concentration of 8×1017 cm−3. LVM spectroscopy shows that SiGa donors are compensated predominantly by [Si-X] complexes, where X has been assigned previously to a gallium vacancy (VGa). Other compensating impurities are not present in the layers at significant concentrations.
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