Abstract
Room temperature measurements are reported of the mid-infrared local vibrational mode (LVM) absorption caused by CAs acceptors in GaAs. A 30:1 range of carbon content was found among a group of 33 samples of melt-grown semi-insulating GaAs. The LVM absorption band area is compared with the dip ΔT this band makes in a transmittance spectral trace. The ratio (ΔT/t) of transmittance dip to sample thickness shows a useful correlation with the integrated LVM band area.
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