Mechanism of {111} Facet Formation during Lateral Solid Phase Epitaxy of Silicon on Amorphous Insulator Substrates

Abstract

Lateral solid phase epitaxy (L-SPE) is one of the most promising means of fabricating SOI structures at low temperatures. For the practical use of the L-SPE region, the density of defects must be reduced as low as possible. In order to accomplish this, we must understand the mechanism of {111} facet formation during the L-SPE. So far it has been believed that once the {111} facets are formed during the L-SPE, they reduce the L-SPE growth rate and cause defects. However, at the bottom of V-shaped valley of the two adjacent {111} facets, bond configuration is rather favorable for burying the valley and it would eventually flatten the growth front. Therefore the fact that folded growth front delineated with {111} facets never become flat suggests the existence of obstacle which maintain the {111} facets.