ETCH PITS STUDY OF MOCVD-GROWN GaAs ON Si WITH III-V COMPOUND INTERMEDIATE LAYERS

Abstract

The etch pits of GaAs on Si grown by MOCVD have been studied for epilayers containing various intermediate layer structures grown under different conditions. In the two-step growth method, the etch pit density of GaAs on Si decreases with increasing growth temperature. The etch pit density of GaAs on Si with GaP and strained layer superlattice is smaller than that with the GaP intermediate layer alone. Further reduction of the etch Pit density to 3 × 10 6 cm −2 was obtained by in-situ thermal-cycle annealing.