Mechanism for bipolar resistive switching memory behaviors of a self-assembled three-dimensional MoS2 microsphere composed active layer

Abstract

A self-assembled three-dimensional (3-D) MoS2 microsphere-based memristor with a favorable ON/OFF resistance ratio of ∼104, endurance, and retention time is demonstrated at room temperature. The formation and rupture of a localized Ag metallic filament, establishment and destruction of a boundary-based hopping path, and charge trapping and detrapping from the space charge region co-contribute to the bipolar resistive switching memory behaviours observed in the device of Ag/MoS2/ITO. This work may give insight into the mechanism of the resistive switching memory behaviours of a device with a 3-D micro-scale.