Mechanism and control of post-trim drift of laser-trimmed thick-film resistors : Jayant S. Shah and Lloyd Berrin. IEEE Trans. Components, Hybrids, Mfg Technol.CHMT-1, (2) 130 (June 1978)

Abstract

Important characteristics of boron-doped LPCVD polysilicon layers with regard to sensor applications are presented. Properties such as the resistivity, temperature coefficient of the resistance, gauge factor and long-term stability are described. A pressure sensor utilizing polysilicon piezoresistors with a measurement range of 1 bar and a sensitivity of roughly 11 mV/V FS, a laser-trimmed polysilicon temperature sensor with a sensitivity of −3.4 × 10−3 K−1 and non-linearity of less than 0.5% and a pressure sensor with polysilicon-based on-chip calibration and temperature compensation are described.