Abstract
Abstract Important characteristics of boron-doped LPCVD polysilicon layers with regard to sensor applications are presented. Properties such as the resistivity, temperature coefficient of the resistance, gauge factor and long-term stability are described. A pressure sensor utilizing polysilicon piezoresistors with a measurement range of 1 bar and a sensitivity of roughly 11 mV/V FS, a laser-trimmed polysilicon temperature sensor with a sensitivity of −3.4 × 10 −3 K −1 and non-linearity of less than 0.5% and a pressure sensor with polysilicon-based on-chip calibration and temperature compensation are described.
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