Abstract
We have analyzed the mechanism of off-leakage current in a lightly doped drain (LDD) poly-Si thin film transistor (TFT) structure using a two-dimensional device simulation and by evaluating the temperature dependence. The off-leakage current in the self-aligned TFTs is mainly caused by band-to-band tunneling, and the off-leakage current in the LDD TFTs is mainly caused by phonon-assisted tunneling with the Poole-Frenkel effect. The carrier generation mostly occurs near the intersection of the front-insulator interface and the interface between the LDD and drain regions because both the electron and hole densities are simultaneously low and the electric field is strong.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
