Abstract
One of the urgent problems of mechanics is the study of the regularities of thermomechanical processes that affect the formation of microdefects in dislocation-free silicon single crystals both at the stage of their growth from the melt by the main industrial technology called the Czochralski method, and in subsequent heat treatment technologies of the wafers cut from them. This requires the development of coupled thermomechanical models both for the melt-crystal system, taking into account the crystallization process, and for the entire volume of the thermal unit of industrial growth plants, so that, taking into account the calculated “thermal history” of growing a particular silicon single crystal using modern models of defect formation, determine the regularities of the recombination and transfer processes. intrinsic point defects with their agglomeration into microdefects in monocrystalline silicon. This article provides a brief overview of the work carried out at IPMech RAS in this direction.
Published Version
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