Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals

Abstract

The diffusion model of the formation of growth microdefects has been considered as applied to the description of defect formation in heat-treated silicon single crystals. It has been shown that, in the framework of the proposed kinetic model of defect formation, the formation and development of the defect structure during the growth of a crystal and its heat treatment can be considered within a unified context. The mathematical apparatus of the diffusion model can provide a basis for the development of a program package for the analysis and calculation of the formation of growth and postgrowth microdefects in dislocation-free silicon single crystals. It has been demonstrated that the diffusion model of the formation of growth and post-growth microdefects allows one to determine necessary conditions for the growth of a crystal and the regimes of its heat treatment for the preparation of a precisely defined defect structure.