Abstract
A technique is described for measuring the density and energy distribution of surface states at the Si-SiO2 interface in MNOS capacitors. The effects of charge injection into the insulator are taken into account by making use of a fast voltage ramp to monitor the instantaneous values of the surface potential during a quasistatic capacitance-voltage sweep. The technique has been used to investigate the effect of charges trapped in the nitride on the interface-state density.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
