Abstract
The energy distribution of surface states in the semiconductor bandgap has been obtained spectroscopically from measurements of X-ray photoelectron spectra (XPS) under biases. The XPS measurements are performed for [ca. 30 A ̊ - thick Pt ca. 25 A ̊ - thick oxide/p- InP (1 0 0)] MIS diodes. The difference in binding energy between the In(3 d) and Pt(4 f) peaks, E In E Pt, is changes by applying biases, because of accumulation of charges in the surface states. The energy distribution of the surface states is determined by analyzing the amount of the biasinduced shift in E In E Pt. The density of the surface states is high near the mid-gap, near the conduction band minimum and near the valence band maximum.
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