Measurement techniques for high power semiconductor materials and devices. Annual report, January 1, 1976--December 31, 1976. [Silicon wafers

Abstract

The project is directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high power semiconductor devices in applications for energy generation, transmission, conversion, and conservation. Emphasis is on the development of measurement methods for thyristors and rectifier diodes. The project is designed to provide, disseminate, and foster the standardization of improved measurement methods required in high power semiconductor technology, for use in specifying materials and devices in commerce, and, by industry, in controlling device manufacturing processes and in designing systems. Application of this measurement technology will, for example, enable industry to (1) make power semiconductor devices with greater uniformity of characteristics, thus permitting improvements in parallel and series connections of devices for applications from fusion generation to ac/dc conversion, (2) make devices with higher individual power handling capabilities, thus permitting very large reductions in the cost of power handling equipment and fostering the development of direct current (dc) transmission lines to reduce energy waste and required rights-of-way, and (3) provide devices, and the systems utilizing them, with the reliability and performance required in energy generation, utilization, and conservation. The major tasks under this project are to (1) evaluate the feasibility of the photovoltaic method as a rapid, nondestructive technique for characterizing the resistivity uniformity of high resistivity, large-diameter silicon wafers and (2) evaluate the use of thermally stimulated current and capacitance measurements as a means for characterizing lifetime controlling or leakage source defects in power device grade silicon wafers.