Measurement techniques for high-power semiconductor materials and devices. Annual report, October 1, 1980-December 31, 1981. [For calculating excess-carrier lifetime in silicon

Abstract

This annual report describes results of NBS research directed toward the development of measurement methods for semiconductor materials and devices which will lead to more effective use of high-power semiconductor devices in applications for energy generation, transmission, conversion, and conservation. Emphasis is on the development of measurement methods for power-device-grade silicon. Major accomplishments during this reporting period were : (1) characterizing by deep level transient spectroscopy (DLTS) the energy levels in silicon power rectifier diodes, (2) writing of a computer program to predict lifetime-related parameters using as input the measured properties of the deep energy levels, (3) developing a novel method to detect nonexponential transients using a conventional double-boxcar DLTS system, (4) analyzing transient capacitance measurements to extend the techniques to nonexponential decays, (5) using a platinum resistance thermometer to calibrate temperature sensing diodes to obtain the precision needed for careful isothermal capacitance measurements, and (6) utilizing trap changing time as a technique to resolve overlapping DLTS peaks in sulfur-doped silicon.