Abstract
The buildup of SiO2-Si interface traps due to radiation was measured by a charge pumping measurement method and by a technique based on the slope of the transistor ln(Id)-Vg characteristics in weak inversion. Both aueasurements make use of MOS transistors. The important differences in the density obtained from the two measurement methods are discussed. The results of the measurements are interpreted to assess the effect of gamma irradiation on the distribution of interface trap density.
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