Abstract
physica status solidi (b)Volume 32, Issue 1 p. K17-K19 Short Note Measurement of Minority Carrier Lifetime in Silicon of Low Dislocation Density J. Noack, J. Noack Physikalisch-Technisches Institut der Deutschen Akademie der Wissenschaften zu Berlin, Abteilung Kristallwachstum und RealstrukturSearch for more papers by this author J. Noack, J. Noack Physikalisch-Technisches Institut der Deutschen Akademie der Wissenschaften zu Berlin, Abteilung Kristallwachstum und RealstrukturSearch for more papers by this author First published: 1969 https://doi.org/10.1002/pssb.19690320156Citations: 6AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume32, Issue11969Pages K17-K19 RelatedInformation
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