Abstract
Measurement of minority carrier lifetime (/spl tau/), either indirectly via pn diode leakage current or directly from MOS capacitors, is used as a monitor to detect and correct contamination in an university fab. Diodes fabricated utilizing an internal gettering process exhibited improvements in leakage current levels about the wafer center when compared with diodes fabricated sans gettering, indicating the possibility of contamination by outdiffusion of impurities from the tube walls. Surface charge analysis (SCA) of an oxidized silicon wafer detected a 30% decrease in /spl tau/ over a 6 hr N/sub 2/ anneal in the tube used for gettering. The same experiment conducted in a tube contaminated with Zn yielded a 45% drop in lifetime. Both gas sources and RCA clean chemistry are being investigated as possible contamination sources of the getter tube.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
