Measurement of ion-induced secondary electron emission coefficient for MgO thin film with plasma treatment

Abstract

Summary form only given, as follows. The characteristics of MgO protective layers are very important for the development of recent AC-type plasma display panel (AC-PDP). The ion-induced secondary electron emission coefficient /spl gamma/ is one of the characteristics of the MgO protective layer which correlates to the ignition voltage of AC-PDPs. Recently many researchers have been studying to get the highest /spl gamma/. Therefore we selected the method of O/sub 2/, Ar and H/sub 2/ plasma treatment for MgO protective layer. In this research, we used two steps of MgO protected layer growing method to get higher quality. First MgO thin films were prepared by using electron beam evaporation method from sintered materials. And then they were treated by O/sub 2/, Ar and H/sub 2/ plasma by using RF-plasma generation system. And secondary electron emission coefficient obtained for MgO protective layers deposited from sintered material with O/sub 2/ plasma treatment by 5, 10, minutes and without plasma treatment, respectively. The ion-induced secondary electron emission coefficient /spl gamma/ of MgO protective layer was measured by /spl gamma/-FIB system throughout this experiment to investigate the influence of these plasma treatments on it. The energy of Ne/sup +/ ions used has been ranged from 100eV to 200eV throughout this experiment.