Measurement of ion induced secondary electron emission coefficient(γ)and work function of vacuum annealed MgO protective layer in AC PDP

Abstract

MgO films as the protective layer in AC-PDPs has been annealed here under vacuum environment in order to eliminate absorbed material onto the MgO layer. Vacuum annealed can be one of the most important processes for forming long-lived panel. It is of great important to investigate the influence of vacuum annealed on the ion-induced secondary electron emission coefficient(/spl gamma/) from a MgO protective layer. In this research, /spl gamma/ and work-function of the vacuum annealed MgO films has been investigated by /spl gamma/-FIB(focused ion beam) system. Also the characteristics of /spl gamma/ and work-function for as-deposited and vacuum annealed MgO films have been investigated and compared with each other throughout this research. The MgO protective layer is deposited on the dielectric layer by electron beam evaporation at deposition rates of approximately 5/spl sim/10 /spl Aring//s in a vacuum of about 1.1/spl times/10/sup -6/ Torr. The thickness of MgO layer is about 5000 /spl Aring/. The deposited MgO films have been vacuum annealed at 300/spl deg/C for 15 minutes. Also some of the as-deposited MgO films and Vacuum annealed MgO films have been air-hold by 24-hours in this experiment. The /spl gamma/ and work-function characteristics for these two MgO films have been measured by /spl gamma/-FIB system and compared with each other throughout this experiment.