Measurement of High Field Electron Transport in Silicon Carbide

Abstract

We report recent measurements of the drift velocity of electrons parallel to the basal plane in 6H and 4H silicon carbide (SiC) as a function of applied electric field. The dependence of the low field mobility and saturated drift velocity on temperature are also reported. The saturated drift velocities at room temperature are approximately 1.9/spl times/10/sup 7/ cm/s in 6H-SiC and 2.2/spl times/10/sup 7/ cm/s in 4H-SiC.